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AP4N10MSI Datasheet 100V N-Channel Enhancement Mode MOSFET

Manufacturer: APM

Datasheet Details

Part number AP4N10MSI
Manufacturer APM
File Size 718.94 KB
Description 100V N-Channel Enhancement Mode MOSFET
Download AP4N10MSI Download (PDF)

General Description

AP4N10MSI 100V N-Channel Enhancement Mode MOSFET The AP4N10MSI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

General

Overview

Description AP4N10MSI 100V N-Channel Enhancement Mode MOSFET The AP4N10MSI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.

Key Features

  • VDS = 100V ID =4.0A RDS(ON) < 250mΩ @ VGS=10V (Type:200mΩ).