DESCRIPTION
AP4N10MSI 100V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 100V ID =4.0A RDS(ON) < 250mΩ @ VGS=10V (Type：200mΩ) Application LED Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack AP4N10MSI SOT223-3L Marking AP4N10MSI XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS ID@TA=25℃ ID@TA=100℃ IDM Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 PD@TA=25℃ Total Power Dissipation3 TSTG Storage Temperature Range TJ Operating Junction Temperature Range RθJA Thermal Resistance Junction-ambient 1 RθJC Thermal Resistance Junction-Case1 Rating 100 ±20 4.0 2.0 8 3.75 -55 to 150 -55 to 150 85 30 Qty(PCS) 3000 Units V V A A A W ℃ ℃ ℃/W ℃/W AP4N10MSI REV1.0 永源微電子科技有限公司 1 AP4N10MSI 100V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted) Symbol Parameter Test Condition Min.
APM
