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AP4N10MSI - 100V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The AP4N10MSI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = 100V ID =4.0A RDS(ON) < 250mΩ @ VGS=10V (Type：200mΩ).

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Datasheet Details

Part number AP4N10MSI
Manufacturer APM
File Size 718.94 KB
Description 100V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP4N10MSI Datasheet
Additional preview pages of the AP4N10MSI datasheet.

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Full PDF Text Transcription

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Description AP4N10MSI 100V N-Channel Enhancement Mode MOSFET The AP4N10MSI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 100V ID =4.
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