AP4N65Y Datasheet 650V N-Channel Enhancement Mode MOSFET

Manufacturer: APM

Download the AP4N65Y datasheet PDF. This datasheet also includes the AP4N65D variant, as both parts are published together in a single manufacturer document.

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AP4N65Y 650v n-channel enhancement mode mosfet by APM - Datasheet Preview — Note: The manufacturer provides a single datasheet file (AP4N65D-APM.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	AP4N65Y
Manufacturer	APM
File Size	2.10 MB
Description	650V N-Channel Enhancement Mode MOSFET
Download	AP4N65Y Download (PDF)

General Description

The AP4N65D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

The transistor can be used in various power switching circuit for system miniaturization and higher efficiency.

General

Overview

AP4N65DIY 650V N-Channel Enhancement Mode MOSFET.

Key Features

VDS = 650V ID =4A RDS(ON) < 2.4Ω @ VGS=10V （Type：2.0Ω）.

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