AP4N65Y Datasheet PDF - APM 650V N-Channel Enhancement Mode MOSFET Specs

AP4N65Y - 650V N-Channel Enhancement Mode MOSFET

This page provides the datasheet information for the AP4N65Y, a member of the AP4N65D 650V N-Channel Enhancement Mode MOSFET family.

Datasheet Summary

Description

The AP4N65D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Features

VDS = 650V ID =4A RDS(ON) < 2.4Ω @ VGS=10V （Type：2.0Ω）.

Datasheet Details

Part number	AP4N65Y
Manufacturer	APM
File Size	2.10 MB
Description	650V N-Channel Enhancement Mode MOSFET
Datasheet	AP4N65Y Datasheet
Additional preview pages of the AP4N65Y datasheet.

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Full PDF Text Transcription

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AP4N65DIY 650V N-Channel Enhancement Mode MOSFET Description The AP4N65D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features VDS = 650V ID =4A RDS(ON) < 2.4Ω @ VGS=10V （Type：2.

Published: Mar 4, 2025 |