DESCRIPTION
GENERAL FEATURES
VDS = 650V ID =4A RDS(ON) < 2.4Ω @ VGS=10V （Type：2.0Ω） Application Uninterruptible Power Supply(UPS) LED Package Marking and Ordering Information Product ID Pack Marking AP4N65D TO-252-3L AP4N65D XXX YYYY AP4N65Y TO-251S-3L AP4N65Y XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter Value VDSS Drain-Source Voltage (VGS = 0V) 650 ID Continuous Drain Current 4 IDM Pulsed Drain Current (note1) 25 VGS Gate-Source Voltage ±30 EAS Single Pulse Avalanche Energy (note2) 80 IAR Avalanche Current (note1) 16 EAR PD TJ, Tstg Repetitive Avalanche Energy note1) Power Dissipation (TC = 25ºC) Operating Junction and Storage Temperature Range 4.5 35 -55~+150 RthJC Thermal Resistance, Junction-to-Case 5.1 RthJA Thermal Resistance, Junction-to-Ambient 62.5 Qty(PCS) 2500 4000 Unit V A A V mJ A mJ W ºC ºC/W ºC/W AP4N65D/Y RVE1.1 永源微電子科技有限公司 1 AP4N65DIY 650V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25℃, unless otherwise noted)...
APM
