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AP4N65D - 650V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The AP4N65D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy.

Features

  • VDS = 650V ID =4A RDS(ON) < 2.4Ω @ VGS=10V （Type：2.0Ω）.

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Datasheet Details

Part number AP4N65D
Manufacturer APM
File Size 2.10 MB
Description 650V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP4N65D Datasheet
Additional preview pages of the AP4N65D datasheet.

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Full PDF Text Transcription

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AP4N65DIY 650V N-Channel Enhancement Mode MOSFET Description The AP4N65D/Y is silicon N-channel Enhanced VDMOSFETs, is obtained by the self-aligned planar Technology which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switching circuit for system miniaturization and higher efficiency. General Features VDS = 650V ID =4A RDS(ON) < 2.4Ω @ VGS=10V （Type：2.
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