DESCRIPTION
AP4N25MI 250V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 250V ID =4A RDS(ON) < 1700mΩ@ VGS=10V （Type：1000mΩ） Application Automative lighting Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack AP4N25MI SOT23-3L ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM PD@TC=25℃ PD@TA=25℃ TSTG TJ RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Drain Current, VGS @ 10V Drain Current, VGS @ 10V Pulsed Drain Current1 Total Power Dissipation Total Power Dissipation3 Storage Temperature Range Operating Junction Temperature Range Maximum Thermal Resistance, Junctionambient Maximum Thermal Resistance, Junction-case AP4N25MI RVE1.0 Marking 4N25MI-AP Rating 250 ±20 4 2.8 12 2 1.1 -55 to 150 -55 to 150 125 3.9 Qty(PCS) 3000 Units V V A A A W W ℃ ℃ ℃/W ℃/W 永源微電子科技有限公司 1 AP4N25MI 150V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
@Tj=25oC(unless otherwise specifie...
APM
