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AP4N25MI - 250V N-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The AP4N25MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = 250V ID =4A RDS(ON) < 1700mΩ@ VGS=10V （Type：1000mΩ）.

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Datasheet Details

Part number AP4N25MI
Manufacturer APM
File Size 1.33 MB
Description 250V N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP4N25MI Datasheet
Additional preview pages of the AP4N25MI datasheet.

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Full PDF Text Transcription

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Description AP4N25MI 250V N-Channel Enhancement Mode MOSFET The AP4N25MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
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