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AP4N25MI Datasheet 250V N-Channel Enhancement Mode MOSFET

Manufacturer: APM

Datasheet Details

Part number AP4N25MI
Manufacturer APM
File Size 1.33 MB
Description 250V N-Channel Enhancement Mode MOSFET
Download AP4N25MI Download (PDF)

General Description

AP4N25MI 250V N-Channel Enhancement Mode MOSFET The AP4N25MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

General

Overview

Description AP4N25MI 250V N-Channel Enhancement Mode MOSFET The AP4N25MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Key Features

  • VDS = 250V ID =4A RDS(ON) < 1700mΩ@ VGS=10V (Type:1000mΩ).