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AP4P05MI - -55V P-Channel Enhancement Mode MOSFET

Datasheet Summary

Description

The AP4P05MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Features

  • VDS = -55V ID =-4.2A RDS(ON) < 125mΩ @ VGS=-10V (Type：108mΩ).

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Datasheet Details

Part number AP4P05MI
Manufacturer APM
File Size 1.38 MB
Description -55V P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP4P05MI Datasheet
Additional preview pages of the AP4P05MI datasheet.

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Full PDF Text Transcription

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Description The AP4P05MI uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -55V ID =-4.
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