DESCRIPTION
GENERAL FEATURES
VDS = -55V ID =-4.2A RDS(ON) < 125mΩ @ VGS=-10V (Type：108mΩ) Application Battery protection Load switch Uninterruptible power supply AP4P05MI -55V P-Channel Enhancement Mode MOSFET Package Marking and Ordering Information Product ID Pack AP4P05MI SOT23-3L ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ IDM Continuous Drain Current, VGS @ -10V1 Continuous Drain Current, VGS @ -10V1 Pulsed Drain Current2 PD@TA=25℃ TSTG Total Power Dissipation3 Storage Temperature Range TJ Operating Junction Temperature Range RθJA Thermal Resistance Junction-Ambient 1 RθJC Thermal Resistance Junction-Case1 Marking 4P05M-AP Rating -55 ±20 -4.2 -2.4 -16 1 -55 to 150 -55 to 150 125 80 Qty(PCS) 3000 Units V V A A A W ℃ ℃ ℃/W ℃/W AP4P05MI RVE1.0 永源微電子科技有限公司 1 AP4P05MI -55V P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TC=25 ℃ unless otherwise noted) Symbol BVDSS △BVDSS/△TJ...
APM
