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AP50G03GD Datasheet 30v N+p-channel Enhancement Mode MOSFET

Manufacturer: APM

Overview: sales.Mr.wang13826508770 .sztssd.

Datasheet Details

Part number AP50G03GD
Manufacturer APM
File Size 1.51 MB
Description 30V N+P-Channel Enhancement Mode MOSFET
Datasheet AP50G03GD-APM.pdf

General Description

AP50G03GD 30V N+P-Channel Enhancement Mode MOSFET The AP50G03GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

General

Key Features

  • VDS = 30V ID =52A RDS(ON) < 10mΩ @ VGS=10V (Type:7.2mΩ) Only VDS = -30V ID =-48A RDS(ON) < 13mΩ @ VGS=-10V (Type:8.8mΩ) Use.

AP50G03GD Distributor