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AP50G03GD - 30V N+P-Channel Enhancement Mode MOSFET

General Description

operation with gate voltages as low as 4.5V.

or in other Switching application.

Key Features

  • VDS = 30V ID =52A RDS(ON) < 10mΩ @ VGS=10V （Type：7.2mΩ） Only VDS = -30V ID =-48A RDS(ON) < 13mΩ @ VGS=-10V （Type：8.8mΩ） Use.

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Datasheet Details

Part number AP50G03GD
Manufacturer APM
File Size 1.51 MB
Description 30V N+P-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP50G03GD Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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sales.Mr.wang13826508770 www.sztssd.com Description AP50G03GD 30V N+P-Channel Enhancement Mode MOSFET The AP50G03GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =52A RDS(ON) < 10mΩ @ VGS=10V （Type：7.2mΩ） Only VDS = -30V ID =-48A RDS(ON) < 13mΩ @ VGS=-10V （Type：8.