AP50G03GD
AP50G03GD is 30V N+P-Channel Enhancement Mode MOSFET manufactured by APM.
Description
30V N+P-Channel Enhancement Mode MOSFET
The AP50G03GD uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
General Features
VDS = 30V ID =52A RDS(ON) < 10mΩ @ VGS=10V （Type：7.2mΩ）
Only
VDS = -30V ID =-48A RDS(ON) < 13mΩ @ VGS=-10V （Type：8.8mΩ）
Use
Application
BLDC times eng Package Marking and Ordering Information
Product ID
Pack
Marking sh AP50G03GD
TO-252-4L
AP50G03GD XXX YYYY ng Absolute Maximum Ratings (TC=25℃unless otherwise noted)
To Symbol
Parameter
N-Ch
P-Ch
VDS r VGS Fo ID@TC=25℃
Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1
30 ±20 52
-30 ±20 -48
ID@TC=100℃
Continuous Drain Current, VGS @ 10V1
-37.5
Pulsed Drain Current2
-144
Single Pulse Avalanche Energy3
IAS PD@TC=25℃
Avalanche Current Total Power...
