DESCRIPTION
AP50G03GD 30V N+P-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 30V ID =52A RDS(ON) < 10mΩ @ VGS=10V （Type：7.2mΩ） Only VDS = -30V ID =-48A RDS(ON) < 13mΩ @ VGS=-10V （Type：8.8mΩ） Use Application BLDC times eng Package Marking and Ordering Information Product ID Pack Marking sh AP50G03GD TO-252-4L AP50G03GD XXX YYYY ng ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) To Symbol Parameter N-Ch P-Ch VDS rVGS Fo ID@TC=25℃ Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V1 30 ±20 52 -30 ±20 -48 ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 38.5 -37.5 IDM Pulsed Drain Current2 150 -144 EAS Single Pulse Avalanche Energy3 289 378 IAS PD@TC=25℃ Avalanche Current Total Power Dissipation4 28 29.5 46 41.3 TSTG Storage Temperature Range -55 to 150 -55 to 150 TJ Operating Junction Temperature Range -55 to 150 -55 to 150 RθJA Thermal Resistance Junction-Ambient 1 62.5 RθJC Thermal Resistance Junction-Case1 2.3 Qty(PCS) 2500 Units V V A A A mJ A W...
APM
