AP50N20D Datasheet | APM

Description The AP50N20D uses advanced APM-SGTⅠtechnology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 10V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 200V ID =50A RDS(ON) < 55mΩ @ VGS=10V (Type：45mΩ) Application DC/DC Converter Power Management Switches BMS/UPS Package Marking and Ordering Information Product ID Pack TO-252-3L Marking AP50N20D XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol VDS VGS ID@TC=25℃ ID@TC=100℃ IDM EAS IAS PD@TC=25℃ TSTG RθJA RθJC Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Single Pulse Avalanche Energy Avalanche Current Total Power Dissipation4 Storage Temperature Range Operating Junction Temperature Range Thermal Resistance Junction-Ambient Thermal Resistance Junction-Case Rating 200 ±20 50 150 200 10 136 -55 to 150 -55 to 150 Qty(PCS) 2500 Units V V A A A m J A W ℃ ℃ ℃/W ℃/W AP50N20D REV1.0 永源微電子科技有限公司 200V N-Channel Enhancement Mode MOSFET Electrical Characteristics (TC=25℃unless otherwise...