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AP50H03NF2 - 30V N+N-Channel Enhancement Mode MOSFET

General Description

operation with gate voltages as low as 4.5V.

in other Switching application.

Key Features

  • VDS = 30V ID =50A RDS(ON).

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Datasheet Details

Part number AP50H03NF2
Manufacturer APM
File Size 1.43 MB
Description 30V N+N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP50H03NF2 Datasheet

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sales.Mr.wang13826508770 www.sztssd.com Description AP50H03NF2 30V N+N-Channel Enhancement Mode MOSFET The AP50H03NF2 uses advanced APM-SGT II technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =50A RDS(ON) <6.0mΩ @ VGS=10V (Type:4.