AP50H03NF2 Datasheet | APM

Description 30V N+N-Channel Enhancement Mode MOSFET The AP50H03NF2 uses advanced APM-SGT II technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 30V ID =50A RDS(ON) <6.0mΩ @ VGS=10V (Type：4.8mΩ) Only CISS≈814PF Application Use Buck And Boost Wireless impact Car charging times heng Package Marking and Ordering Information s Product ID Pack Marking g AP50H03NF2 PDFN5- 6-8L AP50H03NF2 XXX YYYY Ton Absolute Maximum Ratings (TA=25℃unless otherwise noted) Symbol r VDS Fo VGS Parameter Drain-Source Voltage Gate-Source Voltage Rating 30 ±20 ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 ID@TC=75℃ IDM EAS Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 35 150 28.8 Avalanche Current PD@TA=25℃ Total Power Dissipation4 TSTG Storage Temperature Range -55 to 150 Operating Junction Temperature Range -55 to 150 RθJA Thermal Resistance Junction-Ambient...