AP50H02DF3 Datasheet | APM

Description 20V N+N-Channel Enhancement Mode MOSFET The AP50H02DF3 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =50A RDS(ON) < 8.5mΩ @ VGS=4.5V （Type：6.2mΩ） Application 3.3V MCU Drive Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack DFN3- 3-8L Marking AP50H02DF XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Max. VDSS VGSS ID@TA=25℃ ID@TA=70℃ IDM EAS PD@TA=25℃ TJ, TSTG RθJA RθJC Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current note1 Single Pulsed Avalanche Energy note2 Power Dissipation Operating and Storage Temperature Range Thermal Resistance Junction-Ambient 1 Thermal Resistance, Junction to Case 20 ±12 50 30 120 147.6 37 -55 to +175 85 Qty(PCS) 5000 Units V V A A A m J W ℃ ℃/W ℃/W AP50H02DF3 REV1.0 永源微電子科技有限公司 20V N+N-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter Test Condition V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA IDSS Zero Gate Voltage Drain Current VDS=20V,...