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AP50H02DF3 - 20V N+N-Channel Enhancement Mode MOSFET

General Description

The AP50H02DF3 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

  • VDS = 20V ID =50A RDS(ON) < 8.5mΩ @ VGS=4.5V （Type：6.2mΩ）.

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Datasheet Details

Part number AP50H02DF3
Manufacturer APM
File Size 675.32 KB
Description 20V N+N-Channel Enhancement Mode MOSFET
Datasheet download datasheet AP50H02DF3 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Description AP50H02DF3 20V N+N-Channel Enhancement Mode MOSFET The AP50H02DF3 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 20V ID =50A RDS(ON) < 8.5mΩ @ VGS=4.5V （Type：6.2mΩ） Application 3.3V MCU Drive Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack AP50H02DF3 DFN3*3-8L Marking AP50H02DF XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Max. VDSS VGSS ID@TA=25℃ ID@TA=70℃ IDM EAS PD@TA=25℃ TJ, TSTG RθJA RθJC Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.