DESCRIPTION
AP50H02DF3 20V N+N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 20V ID =50A RDS(ON) < 8.5mΩ @ VGS=4.5V （Type：6.2mΩ） Application 3.3V MCU Drive Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack AP50H02DF3 DFN3*3-8L Marking AP50H02DF XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter Max. VDSS VGSS ID@TA=25℃ ID@TA=70℃ IDM EAS PD@TA=25℃ TJ, TSTG RθJA RθJC Drain-Source Voltage Gate-Source Voltage Continuous Drain Current, VGS @ 4.5V Continuous Drain Current, VGS @ 4.5V Pulsed Drain Current note1 Single Pulsed Avalanche Energy note2 Power Dissipation Operating and Storage Temperature Range Thermal Resistance Junction-Ambient 1 Thermal Resistance, Junction to Case 20 ±12 50 30 120 147.6 37 -55 to +175 85 2 Qty(PCS) 5000 Units V V A A A mJ W ℃ ℃/W ℃/W AP50H02DF3 REV1.0 永源微電子科技有限公司 1 AP50H02DF3 20V N+N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TJ=25 ℃, unless otherwise noted)...
APM
