DESCRIPTION
AP50N04DF 40V N-Channel Enhancement Mode MOSFET GENERAL FEATURES
VDS = 40V ID =50A RDS(ON) < 18mΩ @ VGS=10V （Type：13mΩ） Application VBUS Wireless impact Mobile phone fast charging Package Marking and Ordering Information Product ID Pack Marking AP50N04DF PDFN3X3-8L AP50N04DF XXX YYYY ABSOLUTE MAXIMUM RATINGS
(TC=25℃unless otherwise noted) Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ IDM Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 EAS Single Pulse Avalanche Energy3 IAS Avalanche Current PD@TC=25℃ Total Power Dissipation4 TSTG Storage Temperature Range Rating 40 ±20 50 25 180 313 25 31.3 -55 to 150 TJ RθJA RθJC Operating Junction Temperature Range Thermal Resistance Junction-ambient Thermal Resistance Junction-Case1 -55 to 150 62.5 3 Qty(PCS) 5000 Units V V A A A mJ A W ℃ ℃ ℃/W ℃/W AP50N04DF REV1.0 永源微電子科技有限公司 1 AP50N04DF 40V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS
(TC=25℃unless otherwise noted) Symbol Parameter Conditions Min.
APM
