AP50N04DF Datasheet | APM

Description 40V N-Channel Enhancement Mode MOSFET The AP50N04DF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 40V ID =50A RDS(ON) < 18mΩ @ VGS=10V （Type：13mΩ） Application VBUS Wireless impact Mobile phone fast charging Package Marking and Ordering Information Product ID Pack Marking PDFN3X3-8L AP50N04DF XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Drain-Source Voltage Gate-Source Voltage ID@TC=25℃ ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current PD@TC=25℃ Total Power Dissipation4 TSTG Storage Temperature Range Rating 40 ±20 50 25 180 313 25 31.3 -55 to 150 TJ RθJA RθJC Operating Junction Temperature Range Thermal Resistance Junction-ambient Thermal Resistance Junction-Case1 -55 to 150 62.5 3 Qty(PCS) 5000 Units V V A A A m J A W ℃ ℃ ℃/W...