AP50N06D Datasheet | APM

Description 60V N-Channel Enhancement Mode MOSFET The AP50N06D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = 60V ID =50 A RDS(ON) < 16mΩ @ VGS=10V Only Application Battery protection Use Load switch es Uninterruptible power supply im Package Marking and Ordering Information t Product ID Pack Marking Qty(PCS) TO-252-3L AP50N06D XXXX YYYY ng Absolute Maximum Ratings (TC=25℃unless otherwise noted) e Symbol Parameter sh VDS Drain-Source Voltage g VGS Gate-Source Voltage n ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 To ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 ID@TA=25℃ For ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 Rating 60 ±20 50 25 7.4 6 Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current PD@TC=25℃ Total Power Dissipation4 Units V V...