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AP50N06D Datasheet PDF

APM AP50N06D

The AP50N06D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.
Part No. AP50N06D
Datasheet AP50N06D Download
Manufacturer
APM
Description 60V N-Channel Enhancement Mode MOSFET
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AP50N06D datasheet page 1 preview

DESCRIPTION

AP50N06D 60V N-Channel Enhancement Mode MOSFET

GENERAL FEATURES

VDS = 60V ID =50 A RDS(ON) < 16mΩ @ VGS=10V Only Application Battery protection Use Load switch es Uninterruptible power supply im Package Marking and Ordering Information t Product ID Pack Marking Qty(PCS) AP50N06D TO-252-3L AP50N06D XXXX YYYY ng

ABSOLUTE MAXIMUM RATINGS

(TC=25℃unless otherwise noted) e Symbol Parameter sh VDS Drain-Source Voltage g VGS Gate-Source Voltage n ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 To ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 ID@TA=25℃ For ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 Continuous Drain Current, VGS @ 10V1 2500 Rating 60 ±20 50 25 7.4 6 IDM Pulsed Drain Current2 90 EAS Single Pulse Avalanche Energy3 39.2 IAS Avalanche Current 28 PD@TC=25℃ Total Power Dissipation4 45 Units V V A A A A A mJ A W PD@TA=25℃ Total Power Dissipation4 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ RθJA Thermal Resistance...
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