AP50N06D - 60V N-Channel Enhancement Mode MOSFET

APM

General Description

The AP50N06D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

This device is suitable for use as a Battery protection or in other Switching application.

Key Features

VDS = 60V ID =50 A RDS(ON) < 16mΩ @ VGS=10V Only.

📥 Download Datasheet

AP50N06D 60v n-channel enhancement mode mosfet by APM - Datasheet Preview

Datasheet Details

Part number	AP50N06D
Manufacturer	APM
File Size	2.01 MB
Description	60V N-Channel Enhancement Mode MOSFET
Datasheet	AP50N06D Datasheet

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Full PDF Text Transcription (Reference)

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sales.Mr.wang13826508770 www.sztssd.com Description AP50N06D 60V N-Channel Enhancement Mode MOSFET The AP50N06D uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.