AP50P02BDF Datasheet | APM

Description -20V P-Channel Enhancement Mode MOSFET The AP50P02BDF uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application. General Features VDS = -20V ID =-50A RDS(ON) < 8.5mΩ @ VGS=4.5V (Type：6.3mΩ) Application Battery protection Load switch Uninterruptible power supply Package Marking and Ordering Information Product ID Pack Marking PDFN3- 3-8L AP50P02BDF XXX YYYY Absolute Maximum Ratings (TC=25℃unless otherwise noted) Symbol Parameter Drain-Source Voltage VGS ID@TC=25℃ ID@TC=70℃ IDM PD@TC=25℃ PD@TC=70℃ Gate-Source Voltage Continuous Drain Current, VGS @ -4.5V1 Continuous Drain Current, VGS @ -4.5V1 Pulsed Drain Current2 Total Power Dissipation3 Total Power Dissipation3 TSTG Storage Temperature Range TJ RθJA Operating Junction Temperature Range Thermal Resistance Junction-Ambient 1 RθJC Thermal Resistance Junction-Case1 Rating -20 ±12 -50 -36 -240 70 3.5 -55 to 150 -55 to 150 62.5 2.1 Qty(PCS) 5000 Units V V A A A W W ℃ ℃ ℃/W ℃/W AP50P02BDF REV1.0 永源微電子科技有限公司 -20V P-Channel Enhancement Mode MOSFET Electrical Characteristics (TJ=25℃, unless otherwise...