Datasheet Summary
Preliminary
Advanced Power Electronics Corp.
▼ Lead-Free Package ▼ Low Conductance Loss ▼ Low Profile ( < 0.7mm ) G S
N-CHANNEL ENHANCEMENT MODE POWER MOSFET D
BVDSS RDS(ON) ID
30V 4.7mΩ 17.3A
Description
The AP1003BST used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling patible. The GreenFETTM package is patible with existing soldering techniques and is ideal for power application, especially for high frequency / high efficiency DC-DC converters.
GreenFETTM...