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AP1003BST - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The AP1003BST used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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AP1003BST Preliminary Advanced Power Electronics Corp. ▼ Lead-Free Package ▼ Low Conductance Loss ▼ Low Profile ( < 0.7mm ) G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 30V 4.7mΩ 17.3A Description The AP1003BST used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible. The GreenFETTM package is compatible with existing soldering techniques and is ideal for power application, especially for high frequency / high efficiency DC-DC converters.