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AP1005BSQ - N-CHANNEL ENHANCEMENT MODE POWER MOSFET

General Description

The AP1005BSQ used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible.

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AP1005BSQ Halogen-Free Product Advanced Power Electronics Corp. ▼ Lead-Free Package ▼ Low Conductance Loss ▼ Low Profile ( < 0.7mm ) G S N-CHANNEL ENHANCEMENT MODE POWER ...

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e Loss ▼ Low Profile ( < 0.7mm ) G S N-CHANNEL ENHANCEMENT MODE POWER MOSFET D BVDSS RDS(ON) ID 25V 3.8mΩ 19A Description The AP1005BSQ used the latest APEC Power MOSFET silicon technology with the advanced technology packaging to provide the lowest on-resistance loss, low profile and dual sided cooling compatible. The GreenFETTM package is compatible with existing soldering techniques and is ideal for power application, especially for high frequency / high efficiency DC-DC converters.

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