APT1001RBN Description
D TO-247 G S APT1001RBN 1000V 11.0A 1.00Ω ® POWER MOS IV MAXIMUM RATINGS Symbol VDSS ID IDM VGS PD TJ,TSTG TL Parameter Drain-Source Voltage APT5030BN 500V 21.0A 0.30Ω N - CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS All Ratings: TC = 25°C unless otherwise specified. 0.063" from Case for 10 Sec.