Click to expand full text
APT1001RBVR
1000V 11A 1.000Ω
POWER MOS V ®
Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout.
TO-247
• Faster Switching • Lower Leakage
• 100% Avalanche Tested • Popular TO-247 Package
G
D
S
MAXIMUM RATINGS
Symbol VDSS ID IDM VGS VGSM PD TJ,TSTG TL IAR EAR EAS Parameter Drain-Source Voltage Continuous Drain Current @ TC = 25°C Pulsed Drain Current
1
All Ratings: TC = 25°C unless otherwise specified.
APT1001RBVR UNIT Volts Amps
1000 11 44 ±30 ±40 280 2.
APT1001RBVR Datasheet
