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MS1051 - RF & MICROWAVE TRANSISTORS

General Description

The MS1051 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for HF communications.

This device utilizes state-of-the-art diffused emitter ballasting to achieve extreme ruggedness under severe operating conditions.

Key Features

  • 30 MHz 12.5 VOLTS POUT = 100 WATTS GPE = 12.0 dB.

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Datasheet Details

Part number MS1051
Manufacturer Advanced Power Technology
File Size 123.90 KB
Description RF & MICROWAVE TRANSISTORS
Datasheet download datasheet MS1051 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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140 COMMERCE DRIVE MONTGOMERYVILLE, PA 18936-1013 PHONE: (215) 631-9840 FAX: (215) 631-9855 MS1051 www.datasheet4u.com RF & MICROWAVE TRANSISTORS HF SSB APLICATIONS Features • • • • • • • 30 MHz 12.5 VOLTS POUT = 100 WATTS GPE = 12.0 dB MINIMUM IMD = –30 dBc GOLD METALLIZATION COMMON EMITTER CONFIGURATION DESCRIPTION: The MS1051 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for HF communications. This device utilizes state-of-the-art diffused emitter ballasting to achieve extreme ruggedness under severe operating conditions.