MS1051 Description
The MS1051 is a 12.5 V Class C epitaxial silicon NPN planar transistor designed primarily for HF munications. This device utilizes state-of-the-art diffused emitter ballasting to achieve extreme ruggedness under severe operating conditions. RATINGS (Tcase = 25°C) Symbol VCBO VCEO VEBO IC PDISS TJ T STG Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Device Current Power Dissipation...
MS1051 Key Features
- 30 MHz 12.5 VOLTS POUT = 100 WATTS GPE = 12.0 dB MINIMUM IMD = -30 dBc GOLD METALLIZATION MON EMITTER CONFIGURATION