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TPV376 - NPN SILICON RF POWER TRANSISTOR

General Description

The ASI TPV376 is a Common Emitter Device Designed for High Linearity Class A Television Band III (170-230 MHz) Applications.

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Datasheet Details

Part number TPV376
Manufacturer Advanced Semiconductor
File Size 67.68 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet TPV376 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TPV376 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV376 is a Common Emitter Device Designed for High Linearity Class A Television Band III (170-230 MHz) Applications. PACKAGE STYLE .550 4L STUD(1/4) FEATURES INCLUDE: • Gold Metalization • Emitter Ballasting MAXIMUM RATINGS IC VCB PDISS TJ T STG θ JC 16 A 60 V 150 W @ TC = 25 OC -65 OC to +200 OC -65 OC to +150 OC 1.2 OC/W CHARACTERISTICS SYMBOL BV CEO BV CER BV CBO BV EBO hFE Cob Pout ψ IC = 100 mA IC = 100 mA IC = 100 mA IE = 20 mA VCE = 5.0 V VCB = 30 V VCE = 28 V TC = 25 OC TEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 30 60 60 4.0 UNITS V V V V IC = 1.0 A f = 1.0 MHz IC = 3.5 A IE = 3.