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TPV385 - NPN SILICON RF POWER TRANSISTOR

General Description

Operation in Band III TV Transposers and Transmitter Amplifiers from 170 to 230 MHz.

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Datasheet Details

Part number TPV385
Manufacturer Advanced Semiconductor
File Size 22.86 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet TPV385 Datasheet

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TPV385 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI TPV385 is Designed for Operation in Band III TV Transposers and Transmitter Amplifiers from 170 to 230 MHz. PACKAGE STYLE 500 6L FLG FEATURES INCLUDE: • Gold Metalization • Emitter Ballast Resistors • Internal Input Matching • Common Emitter MAXIMUM RATINGS IC VCB VCE TJ TSTG θJC 10 A (CONT) 65 V 35 V -65 °C to +200 °C -65 °C to +200 °C 1.5 °C/W O 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER CHARACTERISTICS SYMBOL BVCEO BVCER BVCBO BVEBO hFE Cob GP IMD1 ψ IC = 50 mA IC = 50 mA IC = 50 mA IE = 10 mA VCE = 5.0 V VCB = 30 V VCE = 28 V VCE = 28 V Pout = 14 W TC = 25 C NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 35 60 65 4.0 UNITS V V V V IC = 1.0 A f = 1.