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TPV387 - NPN SILICON RF POWER TRANSISTOR

General Description

Operation in Band III TV Transposers and Transmitter Amplifiers from 170 to 230 MHz.

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Datasheet Details

Part number TPV387
Manufacturer Advanced Semiconductor
File Size 28.11 KB
Description NPN SILICON RF POWER TRANSISTOR
Datasheet download datasheet TPV387 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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TPV387 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The TPV387 is Designed for Operation in Band III TV Transposers and Transmitter Amplifiers from 170 to 230 MHz. PACKAGE STYLE 500 6L FLG FEATURES INCLUDE: • Gold Metalization • Emitter Ballast Resistors • Internal Input Matching Common Emitter • MAXIMUM RATINGS IC VCE TJ T STG θ JC 16 A (CONT) 35 V -65 OC to +200 OC -65 OC to +200 OC 1.0 OC/W 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER CHARACTERISTICS SYMBOL BV CEO BV CER BV CBO BV EBO hFE Cob GPE ψ IC = 100 mA IC = 100 mA IC = 50 mA IE = 20 mA VCE = 5.0 V VCB = 30 V VCC = 28 V VCC = 28 V Pout = 24 W VCE = 28 V IMD1 Po1dB TC = 25 OC NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 35 60 65 4.0 UNITS V V V V IC = 1.0 A f = 1.