Advanced Semiconductor TPV387
The TPV387 is Designed for Operation in Band III TV Transposers and Transmitter Amplifiers from 170 to 230 MHz.| Part No. | TPV387 |
|---|---|
| Datasheet | TPV387 Download |
| Manufacturer |  Advanced Semiconductor |
| Description | NPN SILICON RF POWER TRANSISTOR |
| Buy | Stock & Price |
DESCRIPTION
: PACKAGE STYLE 500 6L FLGFEATURES
INCLUDE:● Gold Metalization
● Emitter Ballast Resistors
● Internal Input Matching Common Emitter
●
MAXIMUM RATINGS
IC VCE TJ T STG θ JC 16 A (CONT) 35 V -65 OC to +200 OC -65 OC to +200 OC 1.0 OC/W 1 = COLLECTOR 2 = BASE 3 & 4 = EMITTER CHARACTERISTICS SYMBOL BV CEO BV CER BV CBO BV EBO hFE Cob GPE ψ IC = 100 mA IC = 100 mA IC = 50 mA IE = 20 mA VCE = 5.0 V VCB = 30 V VCC = 28 V VCC = 28 V Pout = 24 W VCE = 28 V IMD1 Po1dB TC = 25 OC NONETEST CONDITIONS RBE = 10 Ω MINIMUM TYPICAL MAXIMUM 35 60 65 4.0 UNITS V V V V IC = 1.0 A f = 1.0 MHz Pout = 24 W ALL PHASEANGLES LOAD VSWR = ∝:1 20 130 13 100 150 --pF dB f = 225 MHz f = 225 MHz f = 225 MHz NO DEGRADATION IN OUTPUT POWER Pref = 24 W IE = 3.5 A VISION CARRIER = -8 dB SIDEBAND SIGNAL = -16 dB SOUND CARRIER = -7 dB -50 90 dB W REV. A VCC = 28 V IQ = 200 mA f = 225 MHz A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE● NORTH HOLLYWOOD, CA 91605
● (818) 982-1200
● FAX (818) 765-3004 Specifications are subject to change without notice.
