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AFN7862WS - N-Channel MOSFET

This page provides the datasheet information for the AFN7862WS, a member of the AFN7862WS-Alfa N-Channel MOSFET family.

Description

AFN7862WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

Features

  • 60V/ 8.7A,RDS(ON)=15mΩ@VGS=10V.
  • 60V/ 7.3A,RDS(ON)=17mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • DFN3X3-8L package design.

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Datasheet preview – AFN7862WS

Datasheet Details

Part number AFN7862WS
Manufacturer Alfa-MOS
File Size 380.41 KB
Description N-Channel MOSFET
Datasheet download datasheet AFN7862WS Datasheet
Additional preview pages of the AFN7862WS datasheet.

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Full PDF Text Transcription

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Alfa-MOS Technology General Description AFN7862WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications. Pin Description ( DFN3X3-8L ) AFN7862WS 60V N-Channel Enhancement Mode MOSFET Features  60V/ 8.7A,RDS(ON)=15mΩ@VGS=10V  60V/ 7.3A,RDS(ON)=17mΩ@VGS=4.
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