AFN7862WS Overview
AFN7862WS, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge. These devices are particularly suited for low voltage power management, such as smart phone and notebook puter and other battery powered circuits, and low in-line power loss are needed in mercial industrial surface mount applications. Pin Description ( DFN3X3-8L ) AFN7862WS 60V N-Channel...
AFN7862WS Key Features
- 60V/ 8.7A,RDS(ON)=15mΩ@VGS=10V
- 60V/ 7.3A,RDS(ON)=17mΩ@VGS=4.5V
- Super high density cell design for extremely low
- Exceptional on-resistance and maximum DC
- DFN3X3-8L package design
- Primary Side Switch
- Synchronous Rectification
- DC/DC Converters & DC/AC Inverters
- Boost Converters