AFN7898S Datasheet 200V N-Channel Enhancement Mode MOSFET

Manufacturer: Alfa-MOS

Download the AFN7898S datasheet PDF. This datasheet also includes the AFN7898S-Alfa variant, as both parts are published together in a single manufacturer document.

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AFN7898S 200v n-channel enhancement mode mosfet by Alfa-MOS - Datasheet Preview — Note: The manufacturer provides a single datasheet file (AFN7898S-Alfa-MOS.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number	AFN7898S
Manufacturer	Alfa-MOS
File Size	671.26 KB
Description	200V N-Channel Enhancement Mode MOSFET
Datasheet	AFN7898S Datasheet

General Description

AFN7898S, N-Channel enhancement mode MOSFET, uses Advanced Trench Technology to provide excellent RDS(ON), low gate charge.

These devices are particularly suited for low voltage power management, such as smart phone and notebook computer and other battery powered circuits, and low in-line power loss are needed in commercial industrial surface mount applications.

Pin Description ( DFN3X3-8L ) AFN7898S 200V N-Channel Enhancement Mode MOSFET

Overview

Alfa-MOS Technology General.

Key Features

ID=7A,RDS(ON)=105mΩ@VGS=10V.
ID=7A,RDS(ON)=115mΩ@VGS=7.5V.
Super high density cell design for extremely low RDS (ON).
Exceptional on-resistance and maximum DC current capability.
DFN3X3-8L package design.

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