Datasheet Details
| Part number | AO3442 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 347.90 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AO3442-AlphaOmegaSemiconductors.pdf |
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Overview: AO3442 100V N-Channel MOSFET General.
| Part number | AO3442 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 347.90 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AO3442-AlphaOmegaSemiconductors.pdf |
|
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Product Summary The AO3442 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).
This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100V 1A < 630mW < 720mW SOT23 Top View Bottom View D D D S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG G S Maximum 100 ±20 1 0.8 4 1.4 0.9 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RqJA 70 100 Maximum Junction-to-Lead Steady-State RqJL 63 Max 90 125 80 Units V V A W °C Units °C/W °C/W °C/W Rev 1.0: August 2023 www.aosmd.com Page 1 of 5 AO3442 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 100 IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250mA 1.7 ID(ON) On state drain current VGS=10V, VDS=5V 4 VGS=10V, ID=1A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=0.8A gFS Forward Transconductance VDS=5V, ID=1A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous CurrentG V 1 mA 5 ±100 nA 2.3 2.9 V A 514 630 mW 983 1200 554 720 mW 2.8 S 0.9 1.2 V 1 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz V
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
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AO3442 | N-Channel MOSFET | Kexin |
| Part Number | Description |
|---|---|
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