Datasheet Details
| Part number | AO3452 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 373.61 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet |
 AO3452 Datasheet
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| Part number | AO3452 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 373.61 KB |
| Description | 30V N-Channel MOSFET |
| Datasheet |
AO3452 Datasheet
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• Low RDS(ON) • RoHS and Halogen-Free Compliant Applications • Load switch • PWM AO3452 30V N-Channel MOSFET Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS =4.5V) RDS(ON) (at VGS =2.5V) 30V 4A < 52mΩ < 65mΩ < 85mΩ SOT23 Top View Bottom View D D D S G G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TA=25°C TA=70°C ID Pulsed Drain Current C IDM TA=25°C Power Dissipation B TA=70°C PD Junction and Storage Temperature Range TJ, TSTG G S Maximum 30 ±12 4 3.2 15 1.4 0.9 -55 to 150 Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 70 100 Maximum Junction-to-Lead Steady-State RθJL 63 Max 90 125 80 Units V V A W °C Units °C/W °C/W °C/W Rev.2.0: June 2016 www.aosmd.com Page 1 of 5 AO3452 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 0.5 ID(ON) On state drain current VGS=10V, VDS=5V 15 VGS=10V, ID=4A RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=3A TJ=125°C VGS=2.5V, ID=2A gFS Forward Transconductance VDS=5V, ID=3.6A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current V 1 µA 5 ±100 nA 1 1.5 V A 43 52 mΩ 70 84 47 65 mΩ 60 85 mΩ 14 S 0.75 1 V 1.5 A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 235 pF 35 pF 18 pF 1 2 6.5 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 10 20 nC Qg(4.5V
General.
| Part Number | Description |
|---|---|
| AO3400 | 30V N-Channel MOSFET |
| AO3400A | 30V N-Channel MOSFET |
| AO3401 | 30V P-Channel MOSFET |
| AO3401A | 30V P-Channel MOSFET |
| AO3401L | P-Channel MOSFET |
| AO3402 | 30V N-Channel MOSFET |
| AO3402L | N-Channel MOSFET |
| AO3403 | 30V P-Channel MOSFET |
| AO3404 | N-Channel MOSFET |
| AO3404A | N-Channel MOSFET |