AO3701 Datasheet PDF - Alpha & Omega Semiconductors P-Channel FET Specs

AO3701 - P-Channel FET

Datasheet Summary

Description

The AO3701 uses advanced trench technology to provide excellent R DS(ON) and low gate charge.

A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications.

It is ESD protected.

Features

VDS (V) = -20V ID = -3A (VGS = -10V) RDS(ON) < 80m Ω (VGS = -10V) RDS(ON) < 100m Ω (VGS = -4.5V) RDS(ON) < 145m Ω (VGS = -2.5V) ESD Rating: 2000V HBM.

Datasheet Details

Part number	AO3701
Manufacturer	Alpha & Omega Semiconductors
File Size	153.58 KB
Description	P-Channel FET
Datasheet	AO3701 Datasheet
Additional preview pages of the AO3701 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com AO3701 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description The AO3701 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications. It is ESD protected. Standard Product AO3701 is Pb-free (meets ROHS & Sony 259 specifications). AO3701L is a Green Product ordering option. AO3701 and AO3701L are electrically identical. SOT-23-5 Top View G S A 1 2 3 5 4 D K Features VDS (V) = -20V ID = -3A (VGS = -10V) RDS(ON) < 80m Ω (VGS = -10V) RDS(ON) < 100m Ω (VGS = -4.5V) RDS(ON) < 145m Ω (VGS = -2.5V) ESD Rating: 2000V HBM SCHOTTKY VDS (V) = 20V, I F = 1A, VF<0.5V@0.

Published: Dec 23, 2006 |