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AO4821 - Dual P-Channel MOSFET

General Description

The AO4821 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V.

This device is suitable for use as a load switch or in PWM applications.

It is ESD protected.

Key Features

  • VDS (V) = -12V ID = -8 A (VGS = -4.5V) RDS(ON) < 18mΩ (VGS = -4.5V) RDS(ON) < 22mΩ (VGS = -2.5V) RDS(ON) < 29mΩ (VGS = -1.8V) ESD Rating: 4KV HBM D1 S2 G2 S1 G1 www. DataSheet4U. com D2 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum -12 ±8 -8 -6.7 -20 2 1.28 -55 to 150 Units V V A TA=25°C.

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Full PDF Text Transcription (Reference)

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AO4821 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO4821 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO4821 is Pb-free (meets ROHS & Sony 259 specifications). AO4821L is a Green Product ordering option. AO4821 and AO4821L are electrically Features VDS (V) = -12V ID = -8 A (VGS = -4.5V) RDS(ON) < 18mΩ (VGS = -4.5V) RDS(ON) < 22mΩ (VGS = -2.5V) RDS(ON) < 29mΩ (VGS = -1.8V) ESD Rating: 4KV HBM D1 S2 G2 S1 G1 www.DataSheet4U.