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AO4822A - 30V Dual N-channel MOSFET

General Description

The AO4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Standard Product AO4822A is Pb-free (meets ROHS & Sony 259 specifications).

Key Features

  • VDS (V) = 30V ID = 8.5A (VGS = 10V) RDS(ON) < 16mΩ (VGS = 10V) RDS(ON) < 26mΩ (VGS = 4.5V) D1 S2 G2 S1 G1 D2 D2 D1 D1 D2 www. DataSheet4U. com 1 2 3 4 8 7 6 5 G1 S1 G2 S2 SOIC-8 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation B Maximum 30 ±20 8.5 6.6 30 2 1.28 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction.

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Full PDF Text Transcription (Reference)

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AO4822A Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4822A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Standard Product AO4822A is Pb-free (meets ROHS & Sony 259 specifications). AO4822AL is a Green Product ordering option. AO4822A and AO4822AL are electrically identical. Features VDS (V) = 30V ID = 8.5A (VGS = 10V) RDS(ON) < 16mΩ (VGS = 10V) RDS(ON) < 26mΩ (VGS = 4.5V) D1 S2 G2 S1 G1 D2 D2 D1 D1 D2 www.DataSheet4U.