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AO4826 - 60V Dual N-Channel MOSFET

Datasheet Summary

Description

The AO4826 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

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Datasheet Details

Part number AO4826
Manufacturer Alpha & Omega Semiconductors
File Size 164.65 KB
Description 60V Dual N-Channel MOSFET
Datasheet download datasheet AO4826 Datasheet
Additional preview pages of the AO4826 datasheet.

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AO4826 60V Dual N-Channel MOSFET General Description The AO4826 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Product Summary VDS (V) = 60V ID = 6.3A (VGS = 10V) RDS(ON) < 25mΩ (VGS = 10V) RDS(ON) < 30mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested Top View SOIC-8 Bottom View Pin1 Top View S2 G2 S1 G1 D2 D2 D1 D1 G1 D1 G2 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current A TA=70°C Pulsed Drain Current B ID IDM Power Dissipation TA=25°C TA=70°C PD Junction and Storage Temperature Range TJ, TSTG Maximum 60 ±20 6.3 5 40 2 1.
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