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AO4828 - 60V Dual N-Channel MOSFET

Datasheet Summary

Description

The AO4828 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

This device is suitable for use as a load switch or in PWM applications.

Features

  • VDS (V) = 60V ID = 4.5A (VGS = 10V) RDS(ON) < 56mW (VGS = 10V) RDS(ON) < 77mW (VGS = 4.5V) 100% UIS tested 100% Rg tested Top View SOIC-8 Bottom View Pin1 D D Top View S2 1 8 D2 G2 2 S1 3 7 D2 6 D1 G1 4 5 D1 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current AF TA=70°C ID Pulsed Drain Current B IDM TA=25°C Power Dissipation TA=70°C Avalanche Current B R.

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Datasheet preview – AO4828

Datasheet Details

Part number AO4828
Manufacturer Alpha & Omega Semiconductors
File Size 350.44 KB
Description 60V Dual N-Channel MOSFET
Datasheet download datasheet AO4828 Datasheet
Additional preview pages of the AO4828 datasheet.

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Full PDF Text Transcription

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AO4828 60V Dual N-Channel MOSFET General Description The AO4828 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. Features VDS (V) = 60V ID = 4.5A (VGS = 10V) RDS(ON) < 56mW (VGS = 10V) RDS(ON) < 77mW (VGS = 4.5V) 100% UIS tested 100% Rg tested Top View SOIC-8 Bottom View Pin1 D D Top View S2 1 8 D2 G2 2 S1 3 7 D2 6 D1 G1 4 5 D1 G1 G2 S1 S2 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current AF TA=70°C ID Pulsed Drain Current B IDM TA=25°C Power Dissipation TA=70°C Avalanche Current B Repetitive avalanche energy 0.
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