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AO4824 - Dual N-Channel MOSFET

General Description

The AO4824 uses advanced trench technology to provide excellent RDS(ON) and low gate charge.

The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters.

Standard Product AO4824 is Pb-free (meets ROHS & Sony 259 specifications).

Key Features

  • Q1 VDS (V) = 30V ID = 8.5A RDS(ON) < 17mΩ RDS(ON) < 27mΩ Q2 VDS(V) = 30V ID=9.8A (VGS = 10V).

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AO4824 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO4824 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DCDC converters. Standard Product AO4824 is Pb-free (meets ROHS & Sony 259 specifications). AO4824L is a Green Product ordering option. AO4824 and AO4824L are electrically identical. Features Q1 VDS (V) = 30V ID = 8.5A RDS(ON) < 17mΩ RDS(ON) < 27mΩ Q2 VDS(V) = 30V ID=9.8A (VGS = 10V) <13mΩ (VGS = 10V) <15mΩ (VGS = 4.5V) D1 D2 SOIC-8 S2 G2 S1 G1 www.DataSheet4U.