Datasheet Details
| Part number | AO4952 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 511.06 KB |
| Description | 30V Dual Asymmetric N-Channel AlphaMOS |
| Download | AO4952 Download (PDF) |
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| Part number | AO4952 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 511.06 KB |
| Description | 30V Dual Asymmetric N-Channel AlphaMOS |
| Download | AO4952 Download (PDF) |
|
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• Latest Trench Power AlphaMOS (αMOS LV) technology • Integrated Schottky Diode (SRFET) on Low-Side • Very Low RDS(on) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 100% UIS Tested 100% Rg Tested Q1 30V 11A <10.5mΩ <15.5mΩ Q2 30V 11A <11.5mΩ <16.5mΩ Top View SOIC-8 Bottom View Top View Q1: SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode D1 Pin1 D2 G2 D2 S2/D1 G1 S2/D1 S1 S2/D1 G1 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Max Q2 Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 ±20 Continuous Drain TA=25°C Current TA=70°C Pulsed Drain Current C Avalanche Current C Avalanche Energy L=0.1mH C 11 ID 9 IDM 75 IAS 18 EAS 16 11 9 74 15 11 VDS Spike 100ns VSPIKE 36 36 TC=25°C Power Dissipation B TC=70°C 22 PD 1.3 1.3 Junction and Storage Temperature Range TJ, TSTG -55 to 150 D2 G2 S2 Units V V A A mJ V W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJL Typ 48 74 32 Max Units 62.5 °C/W 90 °C/W 40 °C/W Rev.1.0: February 2013 www.aosmd.com Page 1 of 8 AO4952 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=10mA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C 0.5 mA 100 IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.4 1.8 2.5 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=11A TJ=125°C 8.3 10.5 mΩ 11.8 15 VGS
AO4952 30V Dual Asymmetric N-Channel AlphaMOS General.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AO4952 | Dual N-Channel MOSFET | Kexin |
| Part Number | Description |
|---|---|
| AO4900 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4900A | Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4902 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4904 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4906 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4912 | Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4914 | 30V Dual N-Channel MOSFET |
| AO4914A | Dual N-Channel Enhancement Mode Field Effect Transistor |
| AO4916 | 30V Dual N-Channel MOSFET |
| AO4916A | Dual N-Channel Enhancement Mode Field Effect Transistor |