Datasheet Details
| Part number | AOK60B65H2AL |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 555.37 KB |
| Description | 650V 60A IGBT |
| Datasheet | AOK60B65H2AL-AlphaOmegaSemiconductors.pdf |
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Overview: AOK60B65H2AL 650V, 60A AlphaIGBT TM With soft and fast recovery anti-parallel diode.
| Part number | AOK60B65H2AL |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 555.37 KB |
| Description | 650V 60A IGBT |
| Datasheet | AOK60B65H2AL-AlphaOmegaSemiconductors.pdf |
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• Latest AlphaIGBT (αIGBT) Technology • 650V Breakdown voltage • Very fast and soft recovery freewheeling diode • High efficient turn-on di/dt controllability • Very high switching speed • Low Turn-Off switching loss and softness • Very good EMI behavior Product Summary VCE IC (TC=100°C) VCE(sat) (TJ=25°C) 650V 60A 1.95V Applications • Welding Machines • UPS & Solar Inverters • Very High Switching Frequency Applications TO-247 C AOK60B65H2AL E C G G E Orderable Part Number Package Type AOK60B65H2AL TO247 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Collector-Emitter Voltage VCE Gate-Emitter Voltage VGE Continuous Collector TC=25°C Current TC=100°C IC Pulsed Collector Current, Limited by TJmax ICM Turn off SOA, VCE≤650V, Limited by TJmax ILM Continuous Diode Forward Current TC=25°C TC=100°C IF Diode Pulsed Current, Limited by TJmax IFM Power Dissipation TC=25°C TC=100°C PD Junction and Storage Temperature Range TJ, TSTG Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL Thermal Characteristics Parameter Symbol Maximum Junction-to-Ambient RθJA Maximum IGBT Junction-to-Case RθJC Maximum Diode Junction-to-Case RθJC Form Tube Minimum Order Quantity 240 AOK60B65H2AL 650 ±30 120 60 180 180 60 30 90 416 166 -55 to 150 300 Units V V A A A A A W °C °C Typical 40 0.3 1.1 Units °C/W °C/W °C/W Rev.1.0: December 2017 www.aosmd.com Page 1 of 9 AOK60B65H2AL Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVCES Collector-Emitter Breakdown Voltage IC=1mA, VGE=0V, TJ=25°C 650 TJ=25°C - VCE(sat) Collector-Emitter Saturation Voltage VGE=15V, IC=60A TJ=125°C - TJ=150°C - TJ=25°C - VF Diode Forward Voltage VGE=0V, IF=30A TJ=125°C - TJ=150°C - VGE(th) Gate-Emitter Threshold Voltage VCE=5V,
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