Datasheet Details
| Part number | AOK60N30L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 362.56 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOK60N30L-AlphaOmegaSemiconductors.pdf |
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Overview: AOK60N30L 300V,60A N-Channel MOSFET General.
| Part number | AOK60N30L |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 362.56 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOK60N30L-AlphaOmegaSemiconductors.pdf |
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Product Summary The AOK60N30L is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs.
VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 100% UIS Tested 100% Rg Tested Top View TO-247 350@150℃ 60A < 0.056Ω D AOK60N30L S D G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt ID IDM IAR EAR EAS dv/dt TC=25°C Power Dissipation B Derate above 25oC PD Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics TJ, TSTG TL Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-Case Symbol RθJA RθCS RθJC G AOK60N30L 300 ±30 60 40 200 9.5 1353 2707 5 658 5.3 -55 to 150 300 AOK60N30L 40 0.5 0.19 S Units V V A A mJ mJ V/ns W W/ oC °C °C Units °C/W °C/W °C/W Rev1.0: Sepetember 2017 www.aosmd.com Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C BVDSS /∆TJ Zero Gate Voltage Drain Current ID=250µA, VGS=0V IDSS Zero Gate Voltage Drain Current VDS=300V, VGS=0V VDS=240V, TJ=125°C IGSS Gate-Body leakage current VDS=0V, VGS=±30V VGS(th) Gate Threshold Voltage VDS=5V, ID=250µA RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=30A gFS Forward Transconductance VDS=40V, ID=30A VSD Diode Forward Voltage IS=1A,VGS
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