Datasheet Details
| Part number | AOK66914 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 579.06 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AOK66914-AlphaOmegaSemiconductors.pdf |
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Overview: AOK66914 100V N-Channel AlphaSGT TM General.
| Part number | AOK66914 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 579.06 KB |
| Description | 100V N-Channel MOSFET |
| Datasheet | AOK66914-AlphaOmegaSemiconductors.pdf |
|
|
|
• Trench Power MOSFET - AlphaSGTTM technology • Extremely Low RDS(ON) • Optimized switching performance • 175°C operating temperature • RoHS and Halogen-Free Compliant Applications • Telecom DC-DC • Industrial power • Load switch Top View TO-247 Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=6V) 100% UIS Tested 100% Rg Tested Max Tj=175°C 100V 120A < 2.8mΩ < 3.7mΩ D Orderable Part Number AOK66914 S D G Package Type TO-247 G S Form Tube Minimum Order Quantity 240 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.1mH C EAS Power Dissipation B TC=25°C TC=100°C PD Power Dissipation A TA=25°C TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 100 ±20 120 120 480 56 48 90 405 500 250 18 13 -55 to 175 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ 5 30 0.22 Max 8 40 0.30 Units °C/W °C/W °C/W Rev.1.1: June 2020 www.aosmd.com Page 1 of 6 AOK66914 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250mA, VGS=0V 100 IDSS Zero Gate Voltage Drain Current VDS=100V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 2.5 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=6V, ID=20A gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A, VGS=0V IS Maximum Body-Diode Continuous Current G DYNAMIC PARAMETERS Ciss Input Capac
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