Datasheet Details
| Part number | AOK60N30 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 336.67 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOK60N30_AlphaOmegaSemiconductors.pdf |
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Overview: AOK60N30 300V,60A N-Channel MOSFET General.
| Part number | AOK60N30 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 336.67 KB |
| Description | N-Channel MOSFET |
| Datasheet | AOK60N30_AlphaOmegaSemiconductors.pdf |
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The AOK60N30 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this part can be adopted quickly into new and existing offline power supply designs.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) 350@150℃ 60A < 0.056Ω 100% UIS Tested 100% Rg Tested For Halogen Free add "L" suffix to part number: AOK60N30L Top View TO-247 D G S G AOK60N30 D S Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy C Single plused avalanche energy G Peak diode recovery dv/dt TC=25° C Power Dissipation B Derate above 25oC Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Maximum Case-to-sink A Maximum Junction-to-Case TC=25° C TC=100° C VGS ID IDM IAR EAR EAS dv/dt PD TJ, TSTG TL Symbol RθJA RθCS RθJC AOK60N30 300 ±30 60 40 200 9.5 1353 2707 5 658 5.3 -55 to 150 300 AOK60N30 40 0.5 0.19 Units V V A A mJ mJ V/ns W W/ oC ° C ° C Units ° C/W ° C/W ° C/W Rev0: May 2012 www.aosmd.com Page 1 of 5 Free Datasheet http://www.datasheet4u.com/ AOK60N30 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol STATIC PARAMETERS BVDSS BVDSS /∆TJ IDSS IGSS VGS(th) RDS(ON) gFS VSD IS ISM Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Diode Forward Voltage Maximum Body-Diode Pulsed Current 3550 VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz 410 22 0.8 70 VGS=10V, VDS=240V, ID=60A 4438 59
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|---|---|---|---|
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