Datasheet4U Logo Datasheet4U.com

AON6426L - N-Channel MOSFET

General Description

The AON6426L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is ideal for load switch and battery protection applications.

Key Features

  • VDS (V) = 30V ID = 24A RDS(ON) < 5.5mΩ RDS(ON) < 7.5mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) - RoHS Compliant - Halogen Free 100% UIS Tested! 100% R g Tested! Top View Fits SOIC8 footprint ! S S S G D D D D G D DFN5X6 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25° Power Dissipation B.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
AON6405 P-Channel MOSFET VBsemi
AON6200L 30V N-Channel MOSFET Freescale
AON6512 N-Channel MOSFET Kexin
AON6516 N-Channel MOSFET Kexin
AON6910A Dual N-Channel MOSFET VBsemi

Other Datasheets by Alpha & Omega Semiconductors

Part Number Description
AON6426 30V N-Channel MOSFET
AON6424 N-Channel MOSFET
AON6428 N-Channel MOSFET
AON6400 N-Channel MOSFET
AON6403 30V P-Channel MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
AON6426L N-Channel Enhancement Mode Field Effect Transistor General Description The AON6426L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Features VDS (V) = 30V ID = 24A RDS(ON) < 5.5mΩ RDS(ON) < 7.5mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) - RoHS Compliant - Halogen Free 100% UIS Tested! 100% R g Tested! Top View Fits SOIC8 footprint ! S S S G D D D D G D DFN5X6 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.