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AON6426L - N-Channel MOSFET

Datasheet Summary

Description

The AON6426L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON).

This device is ideal for load switch and battery protection applications.

Features

  • VDS (V) = 30V ID = 24A RDS(ON) < 5.5mΩ RDS(ON) < 7.5mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) - RoHS Compliant - Halogen Free 100% UIS Tested! 100% R g Tested! Top View Fits SOIC8 footprint ! S S S G D D D D G D DFN5X6 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.1mH C TC=25° Power Dissipation B.

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Datasheet Details

Part number AON6426L
Manufacturer Alpha & Omega Semiconductors
File Size 159.47 KB
Description N-Channel MOSFET
Datasheet download datasheet AON6426L Datasheet
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Full PDF Text Transcription

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AON6426L N-Channel Enhancement Mode Field Effect Transistor General Description The AON6426L combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications. Features VDS (V) = 30V ID = 24A RDS(ON) < 5.5mΩ RDS(ON) < 7.5mΩ (VGS = 10V) (VGS = 10V) (VGS = 4.5V) - RoHS Compliant - Halogen Free 100% UIS Tested! 100% R g Tested! Top View Fits SOIC8 footprint ! S S S G D D D D G D DFN5X6 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current C Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.
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