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AON6444 - N-Channel MOSFET

Description

The AON6444 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior.

This universal technology is well suited for PWM, load switching and general purpose applications.

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AON6444 60V N-Channel MOSFET SDMOS TM General Description The AON6444 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 4.5V) 60V 81A < 6.5mΩ < 8mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 D Top View 8 7 6 5 G S PIN1 Absolute Maximum Ratings TA=25° C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Continuous Drain Current Avalanche Current C Repetitive avalanche energy L=0.
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