Datasheet Details
| Part number | AON6448 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 295.58 KB |
| Description | N-Channel MOSFET |
| Download | AON6448 Download (PDF) |
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Overview: AON6448 80V N-Channel MOSFET SDMOS TM General.
| Part number | AON6448 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 295.58 KB |
| Description | N-Channel MOSFET |
| Download | AON6448 Download (PDF) |
|
|
|
The AON6448 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior.
This universal technology is well suited for PWM, load switching and general purpose applications.
Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS = 7V) 80V 65A < 9.6mΩ < 12mΩ 100% UIS Tested 100% Rg Tested DFN5X6 Top View Bottom View 1 2 3 4 D Top View 8 7 6 5 G S PIN1 Absolute Maximum Ratings TA=25° C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G Pulsed Drain Current Continuous Drain Current Avalanche Current C Avalanche energy L=0.1mH C TC=25° C Power Dissipation B Power Dissipation A TC=100° C TA=25° C TA=70° C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case C Maximum 80 ±25 65 41 138 11 9.0 50 125 83 33 2.5 1.6 -55 to 150 Units V V A VGS TC=25° C C TC=100° TA=25° C TA=70° C ID IDM IDSM IAS, IAR EAS, EAR PD PDSM TJ, TSTG A A mJ W W ° C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJC Typ 14 40 1 Max 17 50 1.5 Units ° C/W ° C/W ° C/W Rev 3: April 2011 www.aosmd.com Page 1 of 7 Free Datasheet http://www.datasheet4u.com/ AON6448 Electrical Characteristics (TJ=25° C unless otherwise noted) Symbol Parameter Conditions ID=250µA, VGS=0V VDS=80V, VGS=0V TJ=55° C VDS=0V, VGS= ±25V VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=10A RDS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=7V, ID=10A Forward Transconductance Diode Forward Voltage VDS=5V, ID=10A IS=1A,VGS=0V TJ=125° C 2.7 140 7.9 13.3 9.6 30 0.65 1 85 2100 VGS=0V, VDS=40V, f=1MHz VGS=0V, VDS=0V, f=1MHz 240 70 0.4 35 VGS=10V, VDS=40V, ID=10A 11 8 VGS=10V, VDS=40V, RL=4Ω, RGEN=3Ω IF=10A, dI/dt=500A/µs 12 45 2600 340 120 0.8 44 14 14 18 10 24.5 5.2 17 6
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