Datasheet Details
| Part number | AON7810 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 279.96 KB |
| Description | 30V Dual N-Channel MOSFET |
| Datasheet | AON7810-AlphaOmegaSemiconductors.pdf |
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Overview: AON7810 30V Dual N-Channel AlphaMOS General.
| Part number | AON7810 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 279.96 KB |
| Description | 30V Dual N-Channel MOSFET |
| Datasheet | AON7810-AlphaOmegaSemiconductors.pdf |
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• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Application • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested 30V 6A < 14mΩ < 20.5mΩ DFN 3x3_Dual Top View Bottom View Pin 1 Pin 1 D1 D1 S2 G2 Top View G1 S1 D2 D2 G1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C ID IDM Continuous Drain TA=25°C Current TA=70°C Avalanche Current C Avalanche energy L=0.05mH C IDSM IAS EAS VDS Spike 100ns VSPIKE TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 6 5 24 6 5 20 10 36 20.5 8 3.1 2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 30 60 5 Max 40 75 6 D1 D2 G2 S1 S2 Units V V A A A mJ V W W °C Units °C/W °C/W °C/W Rev0: Aug 2012 www.aosmd.com Page 1 of 6 AON7810 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=125°C 1 µA 5 IGSS Gate-Body leakage current VDS=0V, VGS=±20V ±100 nA VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.3 1.8 2.3 V RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=6A TJ=125°C 11.5 15.8 14 19 mΩ VGS=4.5V, ID=5A 16 20.5 mΩ gFS Forward Transconductance VDS=5V, ID=6A 25 S VSD Diode Forward
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