Datasheet Details
| Part number | AON7812 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 292.20 KB |
| Description | 30V Dual N-Channel MOSFET |
| Datasheet | AON7812-AlphaOmegaSemiconductors.pdf |
|
|
Overview: AON7812 30V Dual N-Channel AlphaMOS General.
| Part number | AON7812 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 292.20 KB |
| Description | 30V Dual N-Channel MOSFET |
| Datasheet | AON7812-AlphaOmegaSemiconductors.pdf |
|
|
|
• Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) 30V 6A < 14.5mΩ < 20.5mΩ Applications • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested DFN 3x3_Dual Top View Bottom View Top View D1 D2 Pin 1 D1 D1 S2 G2 Pin 1 G1 S1 D2 D2 G1 G2 S1 S2 Orderable Part Number AON7812 Package Type DFN 3x3 EP Form Tape & Reel Minimum Order Quantity 5000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.05mH C EAS VDS Spike Power Dissipation B 10µs TC=25°C TC=100°C VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 30 ±20 6 4.5 24 6 5 18 8 36 12.5 5 4.1 2.6 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Symbol Typ Maximum Junction-to-Ambient A t ≤ 10s Maximum Junction-to-Ambient A D Steady-State RθJA 25 50 Maximum Junction-to-Case Steady-State RθJC 8 Max 30 60 10 Units °C/W °C/W °C/W Rev.1.0: February 2014 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 1.4 VGS=10V, ID=6A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=5A gFS Forward Transconductance VDS=5V, ID=6A VSD
| Part Number | Description |
|---|---|
| AON7810 | 30V Dual N-Channel MOSFET |
| AON7804 | 30V Dual N-Channel MOSFET |
| AON7820 | 20V Dual N-Channel MOSFET |
| AON7826 | 20V Dual N-Channel MOSFET |
| AON7140 | 40V N-Channel MOSFET |
| AON7200 | 30V N-Channel MOSFET |
| AON7202 | 30V N-Channel MOSFET |
| AON7210 | 30V N-Channel MOSFET |
| AON7220 | 25V N-Channel MOSFET |
| AON7230 | N-Channel MOSFET |