Datasheet Details
| Part number | AON7820 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 288.24 KB |
| Description | 20V Dual N-Channel MOSFET |
| Datasheet | AON7820-AlphaOmegaSemiconductors.pdf |
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Overview: AON7820 20V Dual N-Channel MOSFET General.
| Part number | AON7820 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 288.24 KB |
| Description | 20V Dual N-Channel MOSFET |
| Datasheet | AON7820-AlphaOmegaSemiconductors.pdf |
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Product Summary The AON7820 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RSS(ON).
This device is ideal for load switch and battery protection applications.
VDS IS (at VGS=4.5V) RSS(ON) (at VGS=4.5V) RSS(ON) (at VGS =3.5V) RSS(ON) (at VGS =2.5V) Typical ESD protection 20V 35A < 16mΩ < 17mΩ < 20mΩ HBM Class 2 DFN 3x3 EP Top View Bottom View Pin 1 Top View S1 G1 S2 G2 D1 D1 D2 G D2 D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TC=25°C Current TC=100°C Pulsed Drain Current C IS ISM Continuous Drain Current TA=25°C TA=70°C ISSM TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Maximum 20 ±12 35 22 80 11 9 31 12.5 3.1 2 -55 to 150 Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ 30 60 3.2 Max 40 75 4 D S Units V V A A W W °C Units °C/W °C/W °C/W Rev 0: August 2011 www.aosmd.com Page 1 of 6 AON7820 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V VDS=20V, VGS=0V IGSS VGS(th) ID(ON) Gate-Body leakage current Gate Threshold Voltage On state drain current VDS=0V, VGS=±10V VDS=VGS ID=250µA VGS=4.5V, VDS=5V VGS=4.5V, IS=11A RSS(ON) gFS VSD IS Static Drain-Source On-Resistance VGS=3.5V, IS=10A VGS=2.5V, IS=9A Forward Transconductance VDS=5V, ID=11A Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current TJ=55°C TJ=125°C 20 0.4 80 0.7 13 18.7 13.8 15.6 65 0.58 1 5 10 1.0 16 23 17 20 1 35 V µA µA V A mΩ mΩ mΩ S V A DYNAMIC PARA
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
AON7820 | Dual N-Channel 20V MOSFET | VBsemi |
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