Datasheet Details
| Part number | AONX36320 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 563.75 KB |
| Description | 30V Dual Asymmetric N-Channel MOSFET |
| Datasheet |
 AONX36320 Datasheet
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| Part number | AONX36320 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 563.75 KB |
| Description | 30V Dual Asymmetric N-Channel MOSFET |
| Datasheet |
AONX36320 Datasheet
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• Bottom Source Technology • Very Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS 2.0 and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 Q2 30V 30V 22A 85A < 4.25mΩ < 0.82mΩ < 6.95mΩ < 1.04mΩ Applications • DC/DC Converters in Computing, Servers, and POL • Non-Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested Top View DFN 5X6E Bottom View Top View Bottom View D2/S1 G2 S2 D1 PIN1 G1 S1/D2 PIN D1 Orderable Part Number AONX36320 Package Type DFN 5x6E Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current G TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.01mH C EAS VDS Spike Power Dissipation B 10μs TC=25°C TC=100°C VSPIKE PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Max Q1 Max Q2 30 30 ±20 ±12 22 85 22 85 88 340 22 G 60 19 48 50 80 13 32 36 36 24 75 9.6 30 4.1 5 2.6 3.2 -55 to 150 Units V V A A A mJ V W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case (Note) Note: Bottom S2, D1.
t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ Q1 23 45 4 Typ Q2 Max Q1 20 30 40 60 1.25 5.2 Max Q2 25 50 1.65 Units °C/W °C/W °C/W Rev.1.3: June 2024 www.aosmd.com Page 1 of 10 AONX36320 0 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS
AONX36320 30V Dual Asymmetric N-Channel XSPairFET TM General.
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