Datasheet Details
| Part number | AONX38168 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 443.24 KB |
| Description | 25V Dual Asymmetric N-Channel MOSFET |
| Download | AONX38168 Download (PDF) |
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| Part number | AONX38168 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 443.24 KB |
| Description | 25V Dual Asymmetric N-Channel MOSFET |
| Download | AONX38168 Download (PDF) |
|
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• Bottom Source Technology • Very Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 Q2 25V 25V 60A 85A < 3.6mΩ < 0.85mΩ < 5mΩ < 1.15mΩ Applications • DC/DC Converters in Computing, Servers, and POL • Non-Isolated DC/DC Converters in Telecom and Industrial 100% UIS Tested 100% Rg Tested Top View DFN 5X6E Bottom View Top View Bottom View PIN1 D2/S1 G2 G1 1 S2 PIN1 S1/D2 2 Q1 D1 G1 S1/D2 D1 3 D1 D1 4 S2 D1 8 G2 Q2 7 D2/S1 6 D2/S1 5 D2/S1 G2 8 D2/S1 7 D2/S1 6 D2/S1 5 1 G1 2 S1/D2 S2 D1 3 D1 4 D1 Orderable Part Number AONX38168 Package Type DFN 5x6E Form Tape & Reel Minimum Order Quantity 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.01mH C EAS TC=25°C Power Dissipation B TC=100°C PD TA=25°C Power Dissipation A TA=70°C PDSM Junction and Storage Temperature Range TJ, TSTG Max Q1 Max Q2 25 25 ±12 ±12 60 85 38 85 180 340 24 50 19 40 60 80 18 32 20 69 8 27 3.1 3.2 2 2.1 -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case (Note) Note: Bottom S2, D1.
t ≤ 10s Steady-State Steady-State Symbol RθJA RθJC Typ Q1 Typ Q2 Max Q1 Max Q2 32 30 40 38 60 55 75 68 4.8 1.45 6.2 1.8 Units °C/W °C/W °C/W Rev 2.0: January 2019 www.aosmd.com Page 1 of 10 AONX38168 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 25 IDSS Zero G
AONX38168 25V Dual Asymmetric N-Channel XSPairFET™ General.
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