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AONX36322 - 30V Dual Asymmetric N-Channel MOSFET

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Description

Bottom Source Technology Very Low RDS(ON) Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 Q2 30V 30V 55A 85A < 4.95mΩ < 1.35mΩ < 7.95mΩ

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Datasheet Details

Part number AONX36322
Manufacturer Alpha & Omega Semiconductors
File Size 591.33 KB
Description 30V Dual Asymmetric N-Channel MOSFET
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AONX36322 30V Dual Asymmetric N-Channel MOSFET General Description • Bottom Source Technology • Very Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 Q2 30V 30V 55A 85A < 4.95mΩ < 1.35mΩ < 7.95mΩ < 1.
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