Datasheet Details
| Part number | AONY36304 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 745.11 KB |
| Description | 30V Dual Asymmetric N-Channel MOSFET |
| Download | AONY36304 Download (PDF) |
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| Part number | AONY36304 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 745.11 KB |
| Description | 30V Dual Asymmetric N-Channel MOSFET |
| Download | AONY36304 Download (PDF) |
|
|
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• Trench Power MOSFET technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 30V 51A <5.2mΩ <8.6mΩ Q2 30V 85A <2.8mΩ <3.5mΩ Applications • DC/DC Converters in Computing • POL in Telecom and Industrial 100% UIS Tested 100% Rg Tested Top View DFN 5X6D S2 Pin 1 Bottom View G2 S1/D2 G1 D1 Pin 1 Top View Bottom View Orderable Part Number AONY36304 Package Type DFN 5x6D Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Max Q2 Drain-Source Voltage VDS 30 30 Gate-Source Voltage VGS Continuous Drain Current TC=25°C TC=100°C ID Pulsed Drain Current C IDM Continuous Drain Current TA=25°C TA=70°C IDSM Avalanche Current C IAS Avalanche energy L=0.01mH C EAS TC=25°C Power Dissipation B TC=100°C PD ±20 51 32 110 20 16 50 12.5 21 8.5 ±12 83 52 180 26 21 75 28 31.5 12.5 TA=25°C Power Dissipation A TA=70°C 3.1 3.1 PDSM 2 2 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ Q1 Typ Q2 Max Q1 Max Q2 30 30 40 40 50 50 65 65 4.6 3.1 6 4 Units °C/W °C/W °C/W Rev.1.1: October 2023 www.aosmd.com Page 1 of 10 AONY36304 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.3 VGS=10V, ID=20A RDS(ON) Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID
AONY36304 30V Dual Asymmetric N-Channel MOSFET General.
| Part Number | Description |
|---|---|
| AONY36306 | 30V Dual Asymmetric N-Channel MOSFET |
| AONY36352 | 30V Dual Asymmetric N-Channel MOSFET |
| AONY36354 | Dual Asymmetric N-Channel MOSFET |
| AONY36356 | 30V Dual Asymmetric N-Channel MOSFET |
| AON1605 | 20V P-Channel MOSFET |
| AON1606 | 20V N-Channel MOSFET |
| AON1610 | 20V N-Channel MOSFET |
| AON1611 | P-Channel MOSFET |
| AON1620 | 12V N-Channel MOSFET |
| AON1634 | N-Channel MOSFET |