Datasheet Details
| Part number | AONY36356 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 593.24 KB |
| Description | 30V Dual Asymmetric N-Channel MOSFET |
| Download | AONY36356 Download (PDF) |
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| Part number | AONY36356 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 593.24 KB |
| Description | 30V Dual Asymmetric N-Channel MOSFET |
| Download | AONY36356 Download (PDF) |
|
|
|
• Trench Power MOSFET technology • Low RDS(ON) at 4.5V Vgs • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Applications • DC/DC Converters in Computer • See Note I Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 Q2 30V 30V 32A 32A < 6.1mΩ < 3.8mΩ < 9.6mΩ < 4.7mΩ 100% UIS Tested 100% Rg Tested Top View DFN 5X6B S2 PIN1 Bottom View S2 G2 S2 (S1/D2) D1 G1 D1 D1 D1 PIN1 Top View Bottom View Orderable Part Number AONY36356 Package Type DFN 5x6B Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Max Q2 Drain-Source Voltage VDS 30 30 Gate-Source Voltage Continuous Drain TC=25°C Current G TC=100°C Pulsed Drain Current C Continuous Drain Current Avalanche Current C TA=25°C TA=70°C Avalanche energy L=0.01mH TC=25°C Power Dissipation B TC=100°C C VGS ID IDM IDSM IAS EAS PD ±20 32 30 114 17.5 14 55 15 22 8.7 ±12 32 32 128 24 19 36 6 33 13 TA=25°C Power Dissipation A TA=70°C PDSM 2.9 1.9 3.4 2.2 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ Q1 Typ Q2 Max Q1 Max Q2 35 30 42 36 65 60 82 75 4.5 3 5.7 3.8 Units °C/W °C/W °C/W Rev.1.0: January 2019 www.aosmd.com Page 1 of 10 AONY36356 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current ID=250μA, VGS=0V VDS=30V, VGS=0V IGSS VGS(th) RDS(ON) gFS VSD IS Gate-Body leakage current Gate Threshold Voltage VDS=0V, VGS=±20V VDS=VGS, ID=250mA VGS=10V, ID=20A Static Drain-Source On-Resistance VGS=4.5V, ID=20A Forwar
AONY36356 30V Dual Asymmetric N-Channel MOSFET General.
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