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AONY36356 - 30V Dual Asymmetric N-Channel MOSFET

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Description

Trench Power MOSFET technology Low RDS(ON) at 4.5V Vgs Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Applications DC/DC Converters in Computer See Note I Product Summary VDS ID (at VGS=10V) RDS(ON) (at V

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Datasheet Details

Part number AONY36356
Manufacturer Alpha & Omega Semiconductors
File Size 593.24 KB
Description 30V Dual Asymmetric N-Channel MOSFET
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AONY36356 30V Dual Asymmetric N-Channel MOSFET General Description • Trench Power MOSFET technology • Low RDS(ON) at 4.5V Vgs • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant Applications • DC/DC Converters in Computer • See Note I Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 Q2 30V 30V 32A 32A < 6.1mΩ < 3.8mΩ < 9.6mΩ < 4.
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