Datasheet Details
| Part number | AONY36306 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 712.91 KB |
| Description | 30V Dual Asymmetric N-Channel MOSFET |
| Download | AONY36306 Download (PDF) |
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| Part number | AONY36306 |
|---|---|
| Manufacturer | Alpha & Omega Semiconductors |
| File Size | 712.91 KB |
| Description | 30V Dual Asymmetric N-Channel MOSFET |
| Download | AONY36306 Download (PDF) |
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• Trench Power MOSFET technology • Low RDS(ON) at 4.5V Vgs • Low Gate Charge • High Current Capability • RoHS 2.0 and Halogen-Free Compliant Applications • DC/DC Converters in Computer • See Note I Product Summary VDS ID (at VGS=10V) RDS(ON) (at VGS=10V) RDS(ON) (at VGS=4.5V) Q1 Q2 30V 30V 32A 32A < 6mΩ < 3.8mΩ < 8.6mΩ < 4.7mΩ 100% UIS Tested 100% Rg Tested Top View DFN 5X6B S2 PIN1 Bottom View S2 G2 S2 (S1/D2) D1 G1 D1 D1 D1 PIN1 Top View Bottom View Orderable Part Number AONY36306 Package Type DFN 5x6B Form Minimum Order Quantity Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max Q1 Max Q2 Drain-Source Voltage VDS 30 30 Gate-Source Voltage VGS ±20 ±12 Continuous Drain Current G TC=25°C TC=100°C ID 32 30 32 32 Pulsed Drain Current C IDM 115 128 Continuous Drain Current TA=25°C TA=70°C 17.5 24 IDSM 14 19 Avalanche Current C IAS 50 50 Avalanche energy L=0.01mH C EAS 13 13 TC=25°C Power Dissipation B TC=100°C 22 PD 8.7 33 13 TA=25°C Power Dissipation A TA=70°C 2.9 3.4 PDSM 1.9 2.2 Junction and Storage Temperature Range TJ, TSTG -55 to 150 Units V V A A A mJ W W °C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case t ≤ 10s Steady-State Steady-State Symbol RqJA RqJC Typ Q1 Typ Q2 Max Q1 Max Q2 35 30 42 36 65 60 82 75 4.5 3 5.7 3.8 Units °C/W °C/W °C/W Rev.2.1: August 2023 www.aosmd.com Page 1 of 10 AONY36306 Q1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage ID=250μA, VGS=0V 30 IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V TJ=55°C IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS, ID=250mA 1.3 VGS=10V, ID=20A RDS(ON) Stat
AONY36306 30V Dual Asymmetric N-Channel MOSFET General.
| Part Number | Description |
|---|---|
| AONY36304 | 30V Dual Asymmetric N-Channel MOSFET |
| AONY36352 | 30V Dual Asymmetric N-Channel MOSFET |
| AONY36354 | Dual Asymmetric N-Channel MOSFET |
| AONY36356 | 30V Dual Asymmetric N-Channel MOSFET |
| AON1605 | 20V P-Channel MOSFET |
| AON1606 | 20V N-Channel MOSFET |
| AON1610 | 20V N-Channel MOSFET |
| AON1611 | P-Channel MOSFET |
| AON1620 | 12V N-Channel MOSFET |
| AON1634 | N-Channel MOSFET |