AO4437 Datasheet | Alpha & Omega Semiconductors

Description .. excellent Features VDS (V) = -12V ID = -11 A (VGS = -4.5V) RDS(ON) < 16mΩ (VGS = -4.5V) RDS(ON) < 20mΩ (VGS = -2.5V) RDS(ON) < 25mΩ (VGS = -1.8V) ESD Rating: 4KV HBM The AO4437 uses advanced trench technology to provide RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. It is ESD protected. Standard Product AO4437 is Pb-free (meets ROHS & Sony 259 specifications). AO4437L is a Green Product ordering option. AO4437 and AO4437L are electrically identical. SOIC-8 Top View S S S G D D D D Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A Maximum -12 ±8 -11 -9 -20 3 2.1 -55 to 150 Units V V A TA=25°C TA=70°C TA=25°C TA=70°C ID IDM PD TJ, TSTG W °C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t ≤ 10s Steady-State Steady-State RθJA RθJL Typ 31 63 21 Max 40 75 30 Units °C/W °C/W °C/W Alpha & Omega Semiconductor, Ltd. Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) .. Conditions ID=-250µA, VGS=0V VDS=-9.6V, VGS=0V TJ=55°C VDS=0V, VGS=±4.5V VDS=0V, VGS=±8V VDS=VGS ID=-250µA VGS=-4.5V, VDS=-5V VGS=-4.5V, ID=-11A TJ=125°C VGS=-2.5V, ID=-10A VGS=-1.8V, ID=-6A VDS=-5V, ID=-11A Min -12 Typ Max Units V Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current -1 -5 ±1 ±10 -0.3 -20 -0.55 12.4 17 15.9 20.4 38 -0.74 -1 µA µA µA A ID(ON) RDS(ON) Static Drain-Source On-Resistance 16 21 20 25 -1 -4.5 mΩ mΩ mΩ S V A p F p F p F Ω n C n C n C ns ns ns ns ns n C g FS VSD IS Forward Transconductance Diode Forward Voltage IS=-1A,VGS=0V...