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AO4430 Datasheet 30v N-channel MOSFET

Manufacturer: Alpha & Omega Semiconductors

Overview: AO4430 30V N-Channel MOSFET General.

General Description

The AO4430 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity, body diode characteristics and ultra-low gate resistance.

This device is ideally suited for use as a low side switch in Notebook CPU core power conversion.

RoHS and Halogen-Free pliant Product Summary VDS (V) = 30V ID = 18A (VGS = 10V) RDS(ON) < 5.5mW (VGS = 10V) RDS(ON) < 7.5mW (VGS = 4.5V) 100% UIS Tested 100% Rg Tested SOIC-8 Top View Bottom View D D D D D G S S S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain TA=25°C Current AF TA=70°C ID Pulsed Drain Current B IDM Power Dissipation TA=25°C TA=70°C PD Avalanche Current B IAR Repetitive avalanche energy 0.3mH B EAR Junction and Storage Temperature Range TJ, TSTG Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C t ≤ 10s Steady-State Steady-State Symbol RqJA RqJL G S Maximum 30 ±20 18 15 80 3 2.1 30 135 -55 to 150 Typ Max 31 40 59 75 16 24 Units V V A W A mJ °C Units °C/W °C/W °C/W Rev.6.1: August 2023 .aosmd.

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