Datasheet Summary
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AOU412 N-Channel Enhancement Mode Field Effect Transistor
General Description
The AOU412 uses advanced trench technology to provide excellent RDS(ON), low gate chargeand low gate resistance. This device is ideally suited for use as a high side switch in CPU core power conversion. Standard Product AOU412 is Pb-free (meets ROHS & Sony 259 specifications). AOU412L is a Green Product ordering option. AOU412 and AOU412L are electrically identical.
TO-251 D Top View Drain Connected to Tab
Features
VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 7.5mΩ (VGS = 10V) RDS(ON) < 11mΩ (VGS =...